Investigation of Positive and Negative Bias Temperature Instability of High-\kappa Dielectric Metal Gate Metal--Oxide--Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

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We investigate the impact of positive and negative bias temperature instability (P/NBTI) on the current degradation by using the drain current random telegraph signal (I_{\text{d-RTS}}) in high-\kappa gate dielectric and metal-gate MOSFETs. The samples were stressed at typical BTI oxide electric field ({\sim}7 MV/cm) and I_{\text{d-RTS}} amplitude (\Delta I_{\text{d-RTS}}) distributions were measured before and after P/NBTI stress. It is shown that I_{\text{d-RTS}} degradation (\Delta I_{\text{d-RTS}}/I_{\text{d-RTS}}) in NBTI devices exhibits a wider amplitude distribution than the PBTI one. In addition, we trace trapped charge-induced saturation current I_{\text{D,sat}} degradation in P/NBTI stress. As a result, the statistical analysis indicates that \Delta I_{\text{D,sat}}/I_{\text{D,sat}} of the p-MOSFET is larger than \Delta I_{\text{D,sat}}/I_{\text{D,sat}} of the n-MOSFET. Moreover, the lifetime of the device is numerically estimated based on current degradation with or without RTS. We consequently found that P/NBTI lifetime comes worse by considering the effect of RTS.
2013-03-25