Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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Lin Sun-yun
Fab-3 Engineering-i Dept. Taiwan Semiconductor Manufacturing Co. Ltd.
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Huang Kai-ye
Department Of Electronics Engineering National Thing Hua University
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Tsai Jun-un
Department Of Electronics Engineering National Thing Hua University
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LAI Jinn-horng
Department of Electronics Engineering, National Thing Hua University
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GONG Jeng
Department of Electronics Engineering, National Thing Hua University
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YANG Fu-Jei
Fab-3 Engineering-I Dept., Taiwan Semiconductor Manufacturing Co., Ltd.
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Gong Jeng
Department Of Electronics Engineering National Thing Hua University
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Gong Jeng
Department Of Electrical Engineer National Tsing Hua University
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Yang Fu-jei
Fab-3 Engineering-i Dept. Taiwan Semiconductor Manufacturing Co. Ltd.
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Lai Jinn-horng
Department Of Electronics Engineering National Thing Hua University
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Lai Jinn-horng
Department Of Electrical Engineer National Tsing Hua University
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Tsai J‐l
National Tsing Hua Univ. Hsinchu Twn
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Tsai Jun-lin
Department of Electronics Engineering, National Thing Hua University
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- Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors
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