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Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation | 論文
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Characterization of GdBa_2Cu_3O_ Thin Films by Raman Scattering
- Investigation of Heat-Treating Conditions for Silver-Sheathed Bi2212 Superconducting Coils
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Application of a New Adhesion Promoter to Stable Chemically Amplified Resist Pattern Fabrication on Boron Phosphorus Silicate Glass Substrates
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching
- Enharncement of Photoelectric Conversion Efficiency in Copper Phthalocyanine Solar Cell by Surface Plasmon Excitation
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
- Zn_Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
- A New Method of Surface Plasmon Excitation Mediated by Metallic Nanoparticles
- Enhancement of Photoelectric Conversion Efficiency in Copper Phthalocyanine Solar Cell: White Light Excitation of Surface Plasmon Polaritons
- Effects of External Modulation Signals on the Tracking of Resonance and Antiresonance of Piezoelectric Resonators
- Novel Ferroelectric Liquid Crystals with Very Large Spontaneous Polarization
- Ferroelectric Liquid Crystal Mixtures Doped with Compounds Having Chiral Groups at Both Ends of the Core
- Aberration Tolerance for 130 nm Lithography from Viewpoint of Process Latitude
- Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide
- Fundamental Study of the Mask Topography Effect on the Advanced Phase-Shifting Masks for Next-Generation Lithography