Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Odake Y.
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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ARAI M.
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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HASHIDZUME T.
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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NITTA T.
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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MATSUO I.
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Hashidzume T.
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation