Aberration Tolerance for 130 nm Lithography from Viewpoint of Process Latitude
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-30
著者
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Sasago Masaru
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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SAITO Takashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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WATANABE Hisashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Watanabe Hisashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Saito Takashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation:
関連論文
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Aberration Tolerance for 130 nm Lithography from Viewpoint of Process Latitude
- Fundamental Study of the Mask Topography Effect on the Advanced Phase-Shifting Masks for Next-Generation Lithography