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Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co. | 論文
- A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(Microelectronic Test Structures)
- A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
- A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- A Simulation Methodology for Bidirectional Hot-Carrier Degradation in a Static RAM Circuit
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material
- A Modeling Methodology and Body Effect Analysis for Hot-Carrier Reliability Simulation of Logic Circuits
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Impact of Hf Metal Predeposition on the Properties of HfO2 Grown by Physical and Chemical Vapor Deposition
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Metalorganic Chemical Vapor Deposition of HfO2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen