CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material

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概要

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• The etching of an organic low-dielectric-constant (low-k) material, FLARE, with gas mixtures of CH_4/N_2 and H_2/N_2 was investigated in a magnetic neutral loop discharge (NLD) plasma system. The hole-etching profile of FLARE with a SiC_2 hard mask and reactive ion etching (RIE) lag characteristics (the etch rate depends on the hole size) were studied for hole diameters from 0.16 to 0.4 μn. We discuss the role of CH_4 in organic low-k etching and consider the etching mechanism in a CH_4/N_2 plasma in comparison with that in a H_2/N_2 plasma. Etching with no RIE lag was achieved at a CH_4 concentration of about 30% with a total flow of 100 sccm, pressure of 0.4 Pa, source power of 1000W, and bias power of 200W in a CH4/N2 plasma. FLARE etching profiles with a perpendicular or normal taper and no microtrenching were obtained with CH_4 concentrations below about 70%. We used X-ray photoelectron spectroscopy (XPS) to evaluate films deposited on a Si substrate during etching under several plasma conditions to clarify the mechanism of the organic low-k material etching.

• 社団法人応用物理学会の論文
• 2002-09-15

著者

• Nakagawa H

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.

• Morikawa Yasuhiro

  Institute For Semiconductor Technologies Ul Va C Japan Lid.

• Tamaoka Eiji

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.

• NAKAGAWA Hideo

  ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric industrial Co

• TAKANO Midori

  Matsushita Technoresearch, Inc.

• HAYASHI Toshio

  Matsushita Technoresearch, Inc.

• Takano Midori

  Matsushita Technoresearch Inc.

• Hayashi Toshio

  Matsushita Technoresearch Inc.

関連論文

• Control of Surface Reaction on Highly Accurate Low-k Methylsilsesquioxane Etching Process : Nuclear Science, Plasmas, and Electric Discharges
• Etching Characteristics of Organic Polymers in the Magnetic Neutral Loop Discharge Plasma
• Investigations of Surface Reactions in Neutral Loop Discharge Plasma for High-Aspect-Ratio SiO2 Etching
• CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material
• Organic Low-k Dielectric Material Etching by CH_3NH_2/N_2 Plasma

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