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Ulsi Development Center Mitsubishi Electric Corporation | 論文
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- New Dry Surface-Imaging Process for X-Ray Lithography
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- 窒素イオン注入によるシリコン酸化膜窒化の活性化エネルギー
- High-Speed Convolution System for Real-Time Proximity Effect Correction
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Clarification of Nitridation Effect on Oxide Formation Methods
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist
- Development of 3D Focused-Ion-Beam (FIB) Etching Methods for Fabricating Micro- and Nanodevices
- Growth and Superconductivity of (BiPb)_2Sr_2Ca_2Cu_3O_ Single-Crystal Whiskers : Superconductors
- Mechanism for AlSiCu Alloy Corrosion
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits (Special lssue on SISPAD'99)
- 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
- Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)