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Ulsi Development Center Mitsubishi Electric Corporation | 論文
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
- Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
- A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A Mixed-Mode Voltage Down Converter with Impedance Adjustment Circuitry for Low-Voltage High-Frequency Memories
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