スポンサーリンク
ULVAC Corporation | 論文
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film :Surfaces, Interfaces, and Films
- Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
- Auger Electron Emission from Gold Deposited on Silicon (111) Surface
- Dry Etch Process in Magnetic Neutral Loop Discharge Plasma
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- A NUMERICAL APPROACH TO THE DISCRETE MORSE SEMIFLOW(Variational Problems and Related Topics)
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- Epitaxial Growth of α-Fe Film on Si(111) Substrate by Low-Energy Direct Ion Beam Deposition
- Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching : Etching
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
- Observation of Induction Power Dependence on the Magnetic Neutral Loop Discharge Plasma Thermalization Phenomena
- Generation of Extremely High Vacuum with a New Sputter Ion Pump