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System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- 0.1μm ULSI世代の超微細アルミニウム多層配線を実現するAl-CMP技術
- アルミリフロースパッタ埋め込みとCMPによる溝配線形成
- 3. 45nm/32nm世代ULSI対応の最先端配線技術(次世代コンピュータを支える超高速・超高密度インタコネクション技術)
- ランダムテレグラフノイズの包括的理解に向けた新解析手法の提案とその応用(IEDM特集(先端CMOSデバイス・プロセス技術))
- High Performance SiN-MIM Decoupling Capacitors with Surface-smoothed Bottom Electrodes for High-speed MPUs
- Impact of Barrier Metal Sputtering on Low-k SiOCH Films with Various Chemical Structures
- A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines
- ユビキタス時代に対応したLSIデバイスの構造変革 : RF特性の及ぼす寄生抵抗・容量の影響(配線・実装技術と関連材料技術)
- 低誘電率絶縁膜材料の進化と最先端ULSI多層配線技術
- Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-$k$ Films
- Chip-Level Performance Maximization Using ASIS (Application-Specific Interconnect Structure) Wiring Design Concept for 45nm CMOS Generation(Device,Low-Power, High-Speed LSIs and Related Technologies)
- Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-$k$/Cu Interconnects
- Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
- A New Differential-Amplifier-Based Offset-Cancellation Sense Amplifier for Speed-Improvement of High-Density Static Random Access Memories in Scaled-Down Complementary Metal–Oxide–Semiconductor Technology
- Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
- Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors
- Extrasmall-Area Three-Dimensional Solenoid-Shaped Inductor Integrated into High-Speed Signal Processing Complementary Metal–Oxide–Semiconductor Ultralarge-Scale Integrated Circuits
- 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
- A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications
- Mechanical Property Control of Low-$k$ Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects