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Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University | 論文
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate
- Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
- A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
- Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
- Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
- Investigation of Quasi-Breakdown Mechanism through Post-Quasi-Breakdown Thermal Annealing
- Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
- Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
- Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric
- Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
- The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate