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Semiconductor Research Center Matsushita Electric Ind. Co. Ltd. | 論文
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure
- New 3.5〃 Magneto-Optical Disk System:1.3GB GIGAMO : Technology, Design Concept and Reliability
- A Novel Al/TiN/CVD-W Structure to Eliminate Resistance Anomaly in Deep Submicron Al/CVD-W Interconnects
- Evaluation of LB Films as Quarter Micron Lithography Resists Using Excimer Laser, X-Ray, and Electron Beam Exposure : Techniques, Instrumentations and Measurement
- Correlating Charge-to-Breakdown with Constant-Current Injection to Gate Oxide Lifetime under Constant-Voltage Stress
- Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
- Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- Experimental Study of Impact Ionization Phenomena in Sub-0.1 μm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
- An Experimental Study of Impact Ionization Phenomena in Sub-0.1μm Si MOSFETs
- A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization
- Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes
- Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers
- Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
- New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
- Zn_Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
- Suppression of Resistance Increase in Al/W Interconnects by N_2 Plasma Treatment