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Semiconductor Research Center Matsushita Electric Ind. Co. Ltd. | 論文
- Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating
- SiO_2/Si Interfaces Studied by STM
- Au -Ag/Ni/Te Metal Multilayer Contact to p-type ZnSe
- Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication of Silicon Quantum Wires and Dots (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
- Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices
- Spectroscopic Evaluation on Photosensitive Langmuir Films Using Multichannel Spectrophotometer : Techniques, Instrumentations and Measurement
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices
- Suppression of Resistance Increase in Annealed Al/W Interconnects by Capacitively Coupled Plasma Nitridation on W Surface