Au -Ag/Ni/Te Metal Multilayer Contact to p-type ZnSe

概要

論文の詳細を見る
We report on a new approach for a p-type contact to ZnSe using Au-Ag/Ni/Te multilayer metals which were deposited by resistive heating evaporation and subsequently annealed at 250℃. The current-voltage characteristics were investigated, and a substantial reduction in offset voltage was observed. Cross-sectional high-resolution transmission electron microscopy and electron probe microanalyses revealed the formation of a NiZnSe based amorphous layer between a poly-crystalline NiTe layer and the p-ZnSe. Auger electron spectroscopy indicated the occurrence of interdiffusion at the interface including that of Ag atoms. The reduction in the offset voltage is attributed to the presence of the amorphous interlayer and the heavily Ag doped layer at the contact interface.
社団法人応用物理学会の論文
1997-04-01