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Semiconductor Leading Edge Technologies Inc. | 論文
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors
- Sub 1.3nm Amorphous Ta_2O_5 Gate Dielectrics for Damascene Metal Gate Transistor
- Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
- Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
- Clinical differences between hypoplastic and normocellular or hyperplastic myelodysplastic syndrome
- Comparative effects of three nitrosourea derivatives on cell cycle kinetics
- Flow Microfluorometric Analysis of Cell Kinetics with Antileukemic Drugs
- Differences in Mitogen Response and Suppressor Function of Two Human T Cell Subsets
- 13-cis Retinoic Acid Inhibits Growth of Adult T Cell Leukemia Cells and Causes Apoptosis; Possible New Indication for Retinoid Therapy
- Prognostic significance of bone marrow lymphocyte counts in the nadir phase of acute myelocytic leukemia
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- (Ba, Sr)TiO_3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
- Outgassing quantification analysis of extreme ultraviolet resists (Special issue: Microprocesses and nanotechnology)
- EUV resist outgassing: quantification and release mechanisms