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Semiconductor Leading Edge Technologies Inc. | 論文
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Stabilization of ZrSi_xO_y Films by Irradiation with an ArF Excimer Laser
- Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
- Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- Mechanical Property of Dissimilar Material Nanocomposites Prepared by Ion Beam Assisted Sputtering Process(Physics, Processes, Instruments & Measurements)
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources