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Semiconductor Leading Edge Technologies, Inc. (Selete) | 論文
- Plasma Cure Process for Porous SiOCH Films using CF_4 Gas
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Extendibility of High Mobility HfSiON Gate Dielectrics
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- Fabrication of 65-nm Holes for 157-nm Lithography
- Effect of Hf Sources, Oxidizing Agents, and NH_3/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition
- Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs