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Semiconductor Leading Edge Technologies, Inc. (Selete) | 論文
- Characterization of Fluoropolymer Resist for 157-nm Lithography
- Material Selection for the Metal Gate/High-k Transistors
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
- Intrinsic Problem Affecting Contact Hole Resolution in Hyper NA Era
- Fabrication of 65-nm Holes for 157-nm Lithography
- Suppression of Gate-Edge Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer and its Impact on Scaled MOSFETs
- 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma