Suppression of Gate-Edge Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer and its Impact on Scaled MOSFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Nara Y.
Semiconductor Leading Edge Technology Inc.
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WATANABE T.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Eimori T.
Semiconductor Leading Edge Technologies Inc.
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MISE N.
Semiconductor Leading Edge Technologies, Inc.
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MATSUKI T.
Semiconductor Leading Edge Technologies, Inc.
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ROBATA T.
Semiconductor Leading Edge Technologies, Inc.
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MOROOKA T.
Semiconductor Leading Edge Technologies, Inc.
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Robata T.
Semiconductor Leading Edge Technologies Inc.
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Mise N.
Semiconductor Leading Edge Technologies Inc.
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Matsuki T.
Semiconductor Leading Edge Technologies Inc.
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Morooka T.
Semiconductor Leading Edge Technologies Inc.
関連論文
- Systematic studies on Fermi level pining of Hf-based high-k gate stacks
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO_2 interfaces
- Suppression of Gate-Edge Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer and its Impact on Scaled MOSFETs