65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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OOTSUKA F.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YASUHIRA M.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Arikado T.
Semiconductor Leading Edge Technologies Inc.
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Kawahara T.
Semiconductor Leading Edge Technologies Inc.
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OHJI H.
Semiconductor Leading Edge Technologies, Inc.
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TORII K.
Semiconductor Leading Edge Technologies, Inc.
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MAEDA T.
Semiconductor Leading Edge Technologies, Inc.
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ITOH H.
Semiconductor Leading Edge Technologies, Inc.
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MUTOH A.
Semiconductor Leading Edge Technologies, Inc.
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MITSUHASHI R.
Semiconductor Leading Edge Technologies, Inc.
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HORIUCHI A.
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA H.
Semiconductor Leading Edge Technologies, Inc.
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Ohji H.
Semiconductor Leading Edge Technologies Inc.
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Kitajima H.
Semiconductor Leading Edge Technologies Inc.
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Mitsuhashi R.
Semiconductor Leading Edge Technologies Inc.
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Yasuhira M.
Semiconductor Leading Edge Technologies Inc.
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Torii K.
Semiconductor Leading Edge Technologies Inc.
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Mutoh A.
Semiconductor Leading Edge Technologies Inc.
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Ootsuka F.
Semiconductor Leading Edge Technologies Inc.
関連論文
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Material Selection for the Metal Gate/High-k Transistors
- 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
- Nucleation and Growth Control of Al-CVD for Dual-Damascene Application