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Sematech | 論文
- Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Thermal stability of metal electrodes and its impact on gate dielectric characteristics
- Reliability of thick oxides integrated with HfSiO_x gate dielectric
- Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics
- Current Status of 200 mm and 300 mm Silicon Wafers
- Current Status of 200mm and 300mm Silicon Wafers
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
- Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
- High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
- Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
- Implementing Attenuated Phase Shift Masks for Contacts in Production
- A Model for Threshold Voltage Shift under Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
- Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Using SEMATECH Electrical Test Structures in Assessing Plasma Induced Damage in Poly Etching ( Plasma Processing)
- 300mm Implementation
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing