Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lee B.
Ibm Assignees
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SONG S.
SEMATECH
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PARK H.
Samsung Assignee
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BERSUKER G.
SEMATECH
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CHOI R.
SEMATECH
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HWANG H.
GIST
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Sim J.
Sematech
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YOUNG C.
SEMATECH
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LEE B.
SEMATECH
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PARK H.
SEMATECH
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HWANG H.
Gwangju Institute of Science and Technology
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- Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
- A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
- Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Thermal stability of metal electrodes and its impact on gate dielectric characteristics
- Reliability of thick oxides integrated with HfSiO_x gate dielectric
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