Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lee B.
Ibm Assignees
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SONG S.
SEMATECH
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BERSUKER G.
SEMATECH
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KIRSCH P.
IBM Assignees
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Moumen N.
Ibm Assignee
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Zeitzoff P.
Sematech
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Sim J.
Sematech
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HAE S.
SEMATECH
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ZHANG Z.
Texas Instruments assignee
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MAJHI P.
Intel assignee
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Majhi P.
Intel
関連論文
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- Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
- Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks
- Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
- Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
- A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
- Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Thermal stability of metal electrodes and its impact on gate dielectric characteristics
- Reliability of thick oxides integrated with HfSiO_x gate dielectric
- Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics