Interfacial Layer-Induced Mobility Degradation in High-k Transistors

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Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
Interfacial Layer-Induced Mobility Degradation in High-k Transistors
Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride
Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
Thermal stability of metal electrodes and its impact on gate dielectric characteristics
Reliability of thick oxides integrated with HfSiO_x gate dielectric
Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics
Interfacial Layer-Induced Mobility Degradation in High-$k$ Transistors

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