Interfacial Layer-Induced Mobility Degradation in High-$k$ Transistors

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概要

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• Analysis of electrical and scanning transmission electron microscopy (STEM) and electron energy loss spectra (EELS) data suggests that Hf-based high-$k$ dielectrics deposited on a SiO2 layer modifies the oxygen content of the latter resulting in reduction of the oxide energy band gap and correspondingly increasing its $k$ value. High-$k$ deposition on thinner SiO2 films, below 1.1 nm, may lead to the formation of a highly oxygen deficient amorphous interfacial layer adjacent to the Si substrate. This layer was identified as an important factor contributing to mobility degradation in high-$k$ transistors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• BERSUKER G.

  International SEMATECH

• BARNETT J.

  International SEMATECH

• MOUMEN N.

  International SEMATECH

• FORAN B.

  International SEMATECH

• YOUNG C.

  International SEMATECH

• LYSAGHT P.

  International SEMATECH

• PETERSON J.

  International SEMATECH

• LEE B.

  International SEMATECH

• ZEITZOFF P.

  International SEMATECH

• HUFF H.

  International SEMATECH

• Lee B.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

• Zeitzoff P.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

• Bersuker G.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

• Moumen N.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

• Foran B.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

• Lysaght P.

  International SEMATECH, 2706 Montopolis Dr., Austin, TX, U.S.A.

関連論文

• Interfacial Layer-Induced Mobility Degradation in High-k Transistors
• High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride
• Interfacial Layer-Induced Mobility Degradation in High-$k$ Transistors

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