High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• HUFF H.

  International SEMATECH

• Huff H.

  International Sematech Inc.

• Kwong D.

  University Of Texas At Austin

• LUO T.

  University of Texas at Austin

• AL-SHAREEF H.

  International Sematech, Inc.

• KARAMCHETI A.

  International Sematech, Inc.

• WATT V.

  International Sematech, Inc.

• BROWN G.

  International Sematech, Inc.

• JACKSON M.

  International Sematech, Inc.

• EVANS B.

  Gasonics International

• Al-shareef H.

  International Sematech Inc.

• Karamcheti A.

  International Sematech Inc.

• Jackson M.

  International Sematech Inc.

関連論文

• Interfacial Layer-Induced Mobility Degradation in High-k Transistors
• High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride
• Interfacial Layer-Induced Mobility Degradation in High-$k$ Transistors

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