Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Lee B.

  Ibm Assignees

• PARK C.

  SEMATECH

• SONG S.

  SEMATECH

• PARK H.

  Samsung Assignee

• JU B.

  SEMATECH

• BERSUKER G.

  SEMATECH

• PARK H.

  GIST

• JAMMY R.

  IBM Assignees

• MAJHI P.

  Intel assignee

• ALSHAREEF H.

  Texas Instruments

• JOO M.

  SNDL

• PU J.

  SNDL

• CHO B.

  SNDL

• Majhi P.

  Intel

関連論文

• Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
• Interfacial Layer-Induced Mobility Degradation in High-k Transistors
• Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
• Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
• Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
• A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
• Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
• nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
• Thermal stability of metal electrodes and its impact on gate dielectric characteristics
• Reliability of thick oxides integrated with HfSiO_x gate dielectric
• Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics

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