JAMMY R. | IBM Assignees
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概要
関連著者
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Lee B.
Ibm Assignees
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JAMMY R.
IBM Assignees
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SONG S.
SEMATECH
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KANG C.
SEMATECH
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BERSUKER G.
SEMATECH
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CHOI R.
SEMATECH
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KIRSCH P.
IBM Assignees
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Barnett J.
Sematech
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PARK C.
SEMATECH
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PARK H.
Samsung Assignee
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JU B.
SEMATECH
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PARK H.
GIST
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Quevedo-lopez M.
Texas Instruments
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Lee B.
Ibm
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BURHAM C.
UT/Austin
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NIIMI H.
TI Assignee
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LYSAGHT P.
SEMATECH
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HWANG H.
GIST
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PARK B.
Poongsan Microtec
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KIM S.
Poongsan Microtec
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Jammy R.
Ibm
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Kirsch P.
Ibm
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KRISHNAN S.
SEMATECH
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KRUG C.
SEMATECH
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AGUIRRE F.
UT-Dallas Dept. Elect. Eng.
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WALLACE R.
UT-Dallas Dept. Elect. Eng.
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MAJHI P.
Intel assignee
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YOUNG C.
SEMATECH
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LEE B.
SEMATECH
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HEH D.
SEMATECH
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SIVASUBRAMANI P.
SEMATECH
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LICHTENWALNER J.
Dept. of Materials Science and Engineering, North Carolina State University
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JUR J.
Dept. of Materials Science and Engineering, North Carolina State University
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KINGON A.
Dept. of Materials Science and Engineering, North Carolina State University
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LEE T.
University of Texas at Austin
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ALSHAREEF H.
Texas Instruments
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JOO M.
SNDL
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PU J.
SNDL
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CHO B.
SNDL
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Jur J.
Dept. Of Materials Science And Engineering North Carolina State University
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Majhi P.
Intel
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Kingon A.
Dept. Of Materials Science And Engineering North Carolina State University
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Lichtenwalner J.
Dept. Of Materials Science And Engineering North Carolina State University
著作論文
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
- Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
- Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Reliability of thick oxides integrated with HfSiO_x gate dielectric