KANG C. | SEMATECH
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概要
関連著者
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Lee B.
Ibm Assignees
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SONG S.
SEMATECH
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KANG C.
SEMATECH
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CHOI R.
SEMATECH
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BERSUKER G.
SEMATECH
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JAMMY R.
IBM Assignees
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Barnett J.
Sematech
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PARK H.
Samsung Assignee
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HWANG H.
GIST
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KIRSCH P.
IBM Assignees
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YOUNG C.
SEMATECH
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LEE B.
SEMATECH
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HEH D.
SEMATECH
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LEE T.
University of Texas at Austin
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PARK C.
SEMATECH
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BURHAM C.
UT/Austin
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NIIMI H.
TI Assignee
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JU B.
SEMATECH
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LYSAGHT P.
SEMATECH
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PARK H.
GIST
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PARK B.
Poongsan Microtec
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KIM S.
Poongsan Microtec
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Park H.
Department Of Physics Korea Advanced Institute Of Science And Technology
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SIVASUBRAMANI P.
SEMATECH
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LICHTENWALNER J.
Dept. of Materials Science and Engineering, North Carolina State University
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JUR J.
Dept. of Materials Science and Engineering, North Carolina State University
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KINGON A.
Dept. of Materials Science and Engineering, North Carolina State University
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WEN H.
SEMATECH
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CHANG M.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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JO M.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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LEE T.
Microelectronics Research Center, The University of Texas at Austin
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BROWN G.
SEMATECH
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LEE J.
Microelectronics Research Center, The University of Texas at Austin
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HWANG H.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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BAE S.
Microelectronics Research Center, Department of Electrical and Computer Engineering
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HUSSAIN M.
SEMATECH
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LEE B.
The University of Texas
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Park H.
Department Of Geosystem Engineering School Of Engineering The University Of Tokyo
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Lee J.
Microelectronics Research Center The University Of Texas At Austin
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Lee J.
Microcide Pharmaceuticals Inc.
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Jur J.
Dept. Of Materials Science And Engineering North Carolina State University
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Kingon A.
Dept. Of Materials Science And Engineering North Carolina State University
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Lichtenwalner J.
Dept. Of Materials Science And Engineering North Carolina State University
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Bae S.
Microelectronics Research Center Department Of Electrical And Computer Engineering
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Park H.
Department of Chemical Engineering, Sogang University
著作論文
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Thermal stability of metal electrodes and its impact on gate dielectric characteristics
- Reliability of thick oxides integrated with HfSiO_x gate dielectric
- Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics