Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lee B.
Ibm Assignees
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Barnett J.
Sematech
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PARK C.
SEMATECH
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SONG S.
SEMATECH
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BURHAM C.
UT/Austin
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PARK H.
Samsung Assignee
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NIIMI H.
TI Assignee
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JU B.
SEMATECH
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KANG C.
SEMATECH
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LYSAGHT P.
SEMATECH
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BERSUKER G.
SEMATECH
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CHOI R.
SEMATECH
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PARK H.
GIST
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HWANG H.
GIST
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PARK B.
Poongsan Microtec
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KIM S.
Poongsan Microtec
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KIRSCH P.
IBM Assignees
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JAMMY R.
IBM Assignees
関連論文
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
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