Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Quevedo-lopez M.

  Texas Instruments

• KIRSCH P.

  IBM Assignees

• Kirsch P.

  Ibm

• KRISHNAN S.

  SEMATECH

• PETERSON J.

  SEMATECH

• LI H.-J

  Infineon

• KIM M.

  University of Texas at Dallas

• HUFFMAN C.

  Texas Instruments

関連論文

• Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
• Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks
• Plasma Nitridation of HfO_2 Enabling a 0.9nm EOT with High Mobility for a Gate First MOSFET
• Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
• nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2

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