BERSUKER G. | SEMATECH
スポンサーリンク
概要
関連著者
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Lee B.
Ibm Assignees
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SONG S.
SEMATECH
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BERSUKER G.
SEMATECH
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CHOI R.
SEMATECH
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PARK H.
Samsung Assignee
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YOUNG C.
SEMATECH
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KANG C.
SEMATECH
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KIRSCH P.
IBM Assignees
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JAMMY R.
IBM Assignees
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Sim J.
Sematech
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PARK C.
SEMATECH
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JU B.
SEMATECH
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PARK H.
GIST
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HWANG H.
GIST
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MAJHI P.
Intel assignee
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HEH D.
SEMATECH
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Majhi P.
Intel
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Barnett J.
Sematech
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BURHAM C.
UT/Austin
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NIIMI H.
TI Assignee
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LYSAGHT P.
SEMATECH
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PARK B.
Poongsan Microtec
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KIM S.
Poongsan Microtec
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CHOI Rino
SEMATECH
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Moumen N.
Ibm Assignee
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Zeitzoff P.
Sematech
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HAE S.
SEMATECH
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ZHANG Z.
Texas Instruments assignee
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PARK H.
Gwanju Institute of Science and Technology
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LEE B.
SEMATECH
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PARK H.
SEMATECH
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HWANG H.
Gwangju Institute of Science and Technology
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SIVASUBRAMANI P.
SEMATECH
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LICHTENWALNER J.
Dept. of Materials Science and Engineering, North Carolina State University
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JUR J.
Dept. of Materials Science and Engineering, North Carolina State University
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KINGON A.
Dept. of Materials Science and Engineering, North Carolina State University
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BAE S.
Microelectronics Research Center, Department of Electrical and Computer Engineering
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HUSSAIN M.
SEMATECH
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LEE B.
The University of Texas
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ALSHAREEF H.
Texas Instruments
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JOO M.
SNDL
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PU J.
SNDL
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CHO B.
SNDL
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Jur J.
Dept. Of Materials Science And Engineering North Carolina State University
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Kingon A.
Dept. Of Materials Science And Engineering North Carolina State University
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Lichtenwalner J.
Dept. Of Materials Science And Engineering North Carolina State University
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Bae S.
Microelectronics Research Center Department Of Electrical And Computer Engineering
著作論文
- Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
- Demonstration of Low V_t NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack
- Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFEI
- A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
- Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO_2
- Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics