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School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan | 論文
- Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Effects of Fluoride Dopants in the Starting Materials for BaAl2S4:Eu Thin-Film Phosphors
- Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2))
- Channel Strain Measurement in 32-nm-Node Complementary Metal--Oxide--Semiconductor Field-Effect Transistor by Raman Spectroscopy
- Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Dynamic Correlation between Superionic Coppers in \alpha-CuI
- Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
- Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Structure Analyses of Room Temperature Deposited AlO
- Ge
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Ge homoepitaxial growth by metal–organic chemical vapor deposition using t-C