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Research Laboratories Nippondenso Co. Ltd. | 論文
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Soft X-Ray Emission Spectroscopic Analysis of Pt Silicides (Pt_2Si, PtSi)
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- 200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
- Analysis of Self-Heating in SOI High Voltage MOS Transistor (Special Issue on SOI Devices and Their Process Technologies)
- Performance of X-Ray Stepper for Next-Generation Lithography
- Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
- Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Electron Beam Doping by Superdiffusion in Unirradiated Regions (X
- Novel Technique of Infrared Reflection Absorption Spectroscopy for Si Surface Study
- Behavior of Adsorbed Fatoms on Si Surface after HF Treatment
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
- 3-Dimensional Specific Thickness Glass Diaphragm Lens for Dynamic Focusing
- Solid-Phase Reactions in Al Alloy/TiN/Ti/Si Systems Observed by In Situ Cross-Sectional TEM
- 60GHz mixer MMIC for millimeter wave radar
- Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices