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Research Laboratories Nippondenso Co. Ltd. | 論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Silicon Wafer Direct Bonding without Hydrophilic Native Oxides
- H_2 Partial Pressure Dependences of CH_3 Radical Density and Effects of H_2 Dilution on Carbon Thin-Film Formation in RF Discharge CH_4 Plasma
- Correlation between CH_3 Radical Density and Carbon Thin-Film Formation in RF Discharge CH_4 Plasma
- Calculated Three Dimensional Spatial Distribution of CH_3 Radical Density in the RF Discharge CH_4 Plasma with Parallel-Plate Electrodes
- Effect of Rare Gas Dilution on CH_3 Radical Density in RF-Discharge CH_4 Plasma
- Alternative Interpretation of Impulse Response of Phonon-Polaritons
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- A 200V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
- Biexciton Luminescence from GaN Epitaxial Layers
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Intelligent Power IC with Partial SOI Structure
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers