スポンサーリンク
Research Center for Micro-Structure Devices, Nagoya Institute of Technology | 論文
- Studies on the Influences of $i$-GaN, $n$-GaN, $ p$-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
- Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
- DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
- Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
- Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors
- Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
- Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
- Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
- Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
- Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells
- Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
- Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate