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Research Center for Micro-Structure Devices, Nagoya Institute of Technology | 論文
- Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
- Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition
- Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
- Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
- Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
- Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire
- Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
- Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
- Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
- Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers
- Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate