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Research Center for Micro-Structure Devices, Nagoya Institute of Technology | 論文
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
- Design and Experimental Characteristics of n-St/CaF_2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy
- Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF_2/Au Hot Electron Emitter
- Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing
- Development of Simulation Method for Buried Oxide Formation of SIMOX Structure During Post-Implantation Thermal Annealing
- Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
- Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
- Adaptive Repetitive Control with On-line Estimation of Multiple Periods : Stabilization and Rejection of Periodic Disturbances with Unknown Periods
- Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
- Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
- GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
- 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
- Parameterization of All Multivariable Deadbeat Tracking Controllers
- Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
- Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
- First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
- Static Stability Analysis of Spatial Grasps Including Contact Surface Geometry