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Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. | 論文
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
- New Charge Control Technology by Stencil Mask Ion Implantation
- Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
- Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates
- Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
- Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si
- Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode
- Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
- Novel Nozzle-Scan Coating Method for Low-k Films
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors