Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Arikado T.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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MURAKOSHI A.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO K.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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NISHINOHARA K.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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AKASAKA Y.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SAITO T.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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YAGISHITA A.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Nishinohara K.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Yagishita A.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Suguro K.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Murakoshi A.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Akasaka Y.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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SUGURO K.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MURAKOSHI A.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
関連論文
- Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si
- Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode
- Successful CMOS Operation of Dopant-Segregation Schottky Barrier Transistors (DS-SBTs)
- Ultra Shallow Junction Formation for 80nm CMOS by Controlling Transient Enhanced Diffusion