Ultra Shallow Junction Formation for 80nm CMOS by Controlling Transient Enhanced Diffusion
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Suguro K.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Suguro K.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Murakoshi A.
Ulsi Process Eng. Lab. Microelectronics Eng. Lab. Toshiba Corporation
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Murakoshi A.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Toyoshima Y.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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OHUCHI K.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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ADACHI K.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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HOKAZONO A.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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KANEMURA T.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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AOKI N.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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NISHIGOHRI M.
Advanced Logic Technology Department, Toshiba Corporation Semiconductor Company
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TOYOSHIMA Y.
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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Toyoshima Y.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Nishigohri M.
Advanced Logic Technology Department Toshiba Corporation Semiconductor Company
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Ohuchi K.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Kanemura T.
System Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Adachi K.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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SUGURO K.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MURAKOSHI A.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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HOKAZONO A.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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- Ultra Shallow Junction Formation for 80nm CMOS by Controlling Transient Enhanced Diffusion