Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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HOKAZONO A.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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TSUJII H.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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AOKI N.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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FUJIWARA M.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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KAWANAKA S.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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AZUMA A.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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TOYOSHIMA Y.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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Tsujii H.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Azuma A.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Toyoshima Y.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Kawanaka S.
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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HOKAZONO A.
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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- Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs
- Ultra Shallow Junction Formation for 80nm CMOS by Controlling Transient Enhanced Diffusion