Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Arikado T.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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ITO T.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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IINUMA T.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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MURAKOSHI A.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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AKUTSU H.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO K.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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OKUMURA K.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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YOSHIOKA M.
Lamp Technology and Engineering Division, Ushio Inc.
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OWADA T.
Lamp Technology and Engineering Division, Ushio Inc.
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IMAOKA Y.
Development Department for Electronics Equipment, Dainippon Screen MFG. Co. Ltd.
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MURAYAMA H.
Development Department for Electronics Equipment, Dainippon Screen MFG. Co. Ltd.
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KUSUDA T.
Development Department for Electronics Equipment, Dainippon Screen MFG. Co. Ltd.
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Suguro K.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Murakoshi A.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Imaoka Y.
Development Department For Electronics Equipment Dainippon Screen Mfg. Co. Ltd.
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Owada T.
Lamp Technology And Engineering Division Ushio Inc.
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Akutsu H.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Kusuda T.
Development Department For Electronics Equipment Dainippon Screen Mfg. Co. Ltd.
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Iinuma T.
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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SUGURO K.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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MURAKOSHI A.
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
関連論文
- Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si
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