Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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ITO T.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Kihara F.
Fujitsu Limited
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KUDO H.
FUJITSU LABOTARORIES LIMITED
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MISHIMA Y.
FUJITSU LABOTARORIES LIMITED
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SATOU S.
FUJITSU LABOTARORIES LIMITED
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KUDO H.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
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ISHIKAWA K.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
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MISHIMA Y.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
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SATOU S.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
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KIHARA F.
MCU Technology, Dept., Fujitsu Ltd.
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OKAMATO M.
MCU Technology, Dept., Fujitsu Ltd.
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SUZUKI Y.
Process Integration Dept., Fujitsu Ltd.
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NOMURA T.
Process Integration Dept., Fujitsu Ltd.
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KAWANO M.
Process Integration Dept., Fujitsu Ltd.
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NISHIKAWA K.
Process Engineering Dept., Fujitsu Ltd.
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OZAKI Y.
Product Engineering Dept., Fujitsu Ltd.
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Okamato M.
Fujitsu Limited
関連論文
- Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si
- Large Reduction in Standby Power Consumption Achieved with Stress-controlled SRAM Cell Layout
- Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
- Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport