ISHIKAWA K. | Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
スポンサーリンク
概要
関連著者
-
ISHIKAWA K.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
-
ITO T.
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
-
Okagaki T.
Device Ip Development Dept.
-
Kihara F.
Fujitsu Limited
-
KUDO H.
FUJITSU LABOTARORIES LIMITED
-
MISHIMA Y.
FUJITSU LABOTARORIES LIMITED
-
SATOU S.
FUJITSU LABOTARORIES LIMITED
-
KUDO H.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
-
MISHIMA Y.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
-
SATOU S.
Advanced CMOS Technology Lab., Fujitsu Labs Ltd.
-
KIHARA F.
MCU Technology, Dept., Fujitsu Ltd.
-
OKAMATO M.
MCU Technology, Dept., Fujitsu Ltd.
-
SUZUKI Y.
Process Integration Dept., Fujitsu Ltd.
-
NOMURA T.
Process Integration Dept., Fujitsu Ltd.
-
KAWANO M.
Process Integration Dept., Fujitsu Ltd.
-
NISHIKAWA K.
Process Engineering Dept., Fujitsu Ltd.
-
OZAKI Y.
Product Engineering Dept., Fujitsu Ltd.
-
Okamato M.
Fujitsu Limited
-
Tanizawa M.
Advanced Device Development Dept.
-
TSUDA A.
Device IP Development Dept.
-
KUNIKIYO T.
Device IP Development Dept.
-
WATANABE T.
Device IP Development Dept.
-
NUNOGAMI H.
Device IP Development Dept.
-
UCHIDA A.
Device IP Development Dept.
著作論文
- Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
- Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport