Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Okagaki T.

  Device Ip Development Dept.

• ISHIKAWA K.

  Advanced CMOS Technology Lab., Fujitsu Labs Ltd.

• Tanizawa M.

  Advanced Device Development Dept.

• TSUDA A.

  Device IP Development Dept.

• KUNIKIYO T.

  Device IP Development Dept.

• WATANABE T.

  Device IP Development Dept.

• NUNOGAMI H.

  Device IP Development Dept.

• UCHIDA A.

  Device IP Development Dept.

関連論文

• Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
• Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

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