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Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas | 論文
- Effects of Dielectric-Layer Composition on Growth of Self-Formed Ti-Rich Barrier Layers in Cu(1at% Ti)/Low-k Samples
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Structure Analyses of Ti-Based Self-Formed Barrier Layers
- Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
- Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
- Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
- Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
- Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
- Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond