Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride

スポンサーリンク

概要

• 論文の詳細を見る

• The effects of N2 gas flow ratios in silicon nitride deposition with SiH4–NH3–N2–He gas mixtures at a temperature of 275 °C on stress relaxation have been investigated. We have demonstrated that film stress can be controlled in the range from $-692$ MPa (compression) to 170 MPa (tension) by increasing N2 gas flow ratio. From the evaluation of the composition ratio of N/Si, film density, and bonding structure, the relationships between film stress and these properties are investigated. The amount of nitrogen incorporated into the film as N–H bonds increased with increasing N2 flow ratio, resulting in a higher composition ratio of N/Si. At a higher N2 gas flow ratio, excess N2 gas in the plasma may disturb the ion bombardment of ionized species on the film surface, resulting in a decrease in the film density. The higher N2 gas flow ratio leads to the generation of a Si–N bonding structure with a larger bond angle at the nitrogen atom site due to bond-strain relaxation, leading to a higher frequency of Si–N stretching vibration. Therefore, a nitrogen-richer SiN film with many N–H bonds and a lower film density exhibits bonding structures with a lower bond strain, leading to the relief of film stress.

• 2010-08-25

著者

• Miyatake Hiroshi

  Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas

• Asai Koyu

  Process Development Department Process Technology Development Division Production And Technology Uni

• Murata Tatsunori

  Process Technology Development Division Renesas Technology Corp.

• Matsuura Masazumi

  Process Technology Development Division Renesas Technology Corp.

• Miyagawa Yoshihiro

  Process Technology Development Div. Renesas Technology Corp.

• Miyatake Hiroshi

  Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

関連論文

• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
• Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
• Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-$k$/Metal Gate Transistor
• Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier
• Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
• Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
• Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond
• Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
• Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

スポンサーリンク