Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
スポンサーリンク
概要
- 論文の詳細を見る
The effects of plasma and precursors during low-temperature silicon nitride (LT-SiN) film deposition on the magnetic properties of a CoFeB alloy layer, which is one magnetic material in a magnetic tunnel junction (MTJ) in magnetoresistive random access memory (MRAM), were investigated. The NH3 plasma exposure was found to nitride the CoFeB alloy layer, resulting in degradation of the magnetic properties of the CoFeB alloy layer. To suppress this degradation, NH3-free LT-SiN films deposited using silane and nitrogen source gases with helium or argon dilution in a conventional plasma enhanced chemical vapor deposition (PECVD) apparatus were evaluated. The LT-SiN film deposited under conditions of a highly dilute helium flow in the SiH4–N2–He gas mixture exhibited high density, sufficient moisture-blocking ability, and low leakage current. On the other hand, the film deposited at the SiH4–N2–Ar gas mixture exhibited poor film qualities. It is revealed that helium gas has enhanced the generation of N2 radicals and the decomposition of silane gas during the deposition of the SiH4–N2–He gas mixture. Finally, we demonstrated that the electrical properties of 8-kbit MRAM arrays have been improved by using the optimized NH3-free LT-SiN film for the MTJ-protection layer.
- 2009-04-25
著者
-
Asai Koyu
Process Development Department Process Technology Development Division Production And Technology Uni
-
Murata Tatsunori
Process Technology Development Division Renesas Technology Corp.
-
Matsuura Masazumi
Process Technology Development Division Renesas Technology Corp.
-
Miyagawa Yoshihiro
Process Technology Development Div. Renesas Technology Corp.
-
Asai Koyu
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Murata Tatsunori
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Kojima Masayuki
Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan
-
Isaki Ryuichiro
Business Strategy Planning Division, Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
-
Shibata Toshinori
Business Strategy Planning Division, Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
-
Matsuda Ryoji
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Tsujiuchi Mikio
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Takeuchi Yosuke
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Ueno Shuichi
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Matsuura Masazumi
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Miyagawa Yoshihiro
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Kojima Masayuki
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
関連論文
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
- Low-Temperature Silicon Oxide Offset Spacer Using Plasma-Enhanced Atomic Layer Deposition for High-$k$/Metal Gate Transistor
- Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier
- Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
- Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride
- Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond
- Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices